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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD2581 description high breakdown voltage- : v cbo = 1500v (min) high switching speed high reliability applications color tv horizontal deflection output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current- continuous 10 a i cp collector current-pulse 30 a collector power dissipation @ t a =25 3.0 p c collector power dissipation @ t c =25 70 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2581 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 800 v v ce (sat) collector-emitter saturation voltage i c = 8a; i b = 1.6a b 5.0 v v be (sat) base-emitter saturation voltage i c = 8a; i b = 1.6a b 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 10 a i ces collector cutoff current v ce = 1500v ; r be = 0 1.0 ma i ebo emitter cutoff current v eb = 4v ; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a ; v ce = 5v 20 35 h fe-2 dc current gain i c = 8a ; v ce = 5v 5 8 t f fall time i c = 6a , i b1 = 1.2a ; i b2 = -2.4a p w =20 s; duty cycle 1% 0.3 s isc website www.iscsemi.cn 2 inchange semiconductor isc product specification isc silicon npn power transistor 2SD2581 isc website www.iscsemi.cn |
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